Low frequency noise in phase change materials
- Resource Type
- Conference
- Authors
- Jeyasingh, Rakesh; Chroboczek, J.A.; Ghibaudo, Gerard; Mouis, Mireille; Wong, H.-S. Philip
- Source
- 2011 21st International Conference on Noise and Fluctuations Noise and Fluctuations (ICNF), 2011 21st International Conference on. :476-479 Jun, 2011
- Subject
- Signal Processing and Analysis
Components, Circuits, Devices and Systems
Computing and Processing
Noise
Phase change materials
Noise measurement
Phase change memory
Fluctuations
Resistance
Electrodes
low frequency noise
phase change matrials
amorphous phase
- Language
Low frequency noise (LFN) is particularly well-adapted for studies of phase change memory cells as it is generated in the cells' amorphous volume alone. The latter is known to have a very high concentration of localized traps and the charge transport proceeds via hopping in a random network of traps. LFN is proposed to be generated by variation in the configuration of the traps' structure. The spectral power density of LFN (i) is of the 1/f type, (ii) varies as the cell current square, (iii) is inversely proportional to the cell thickness. Some results of the LFN dependence on the cells' resetting conditions and structure are also discussed.