Defect states in copper indium gallium selenide solar cells from two-wavelength excitation photoluminescence spectroscopy
- Resource Type
- Conference
- Authors
- Jensen, Soren A.; Dippo, Patricia; Mansfield, Lorelle M.; Glynn, Stephen; Kuciauskas, Darius
- Source
- 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC) Photovoltaic Specialists Conference (PVSC), 2016 IEEE 43rd. :3556-3558 Jun, 2016
- Subject
- Aerospace
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Engineering Profession
Fields, Waves and Electromagnetics
Photonics and Electrooptics
Power, Energy and Industry Applications
Spectroscopy
Photonic band gap
Photovoltaic cells
Photoluminescence
Laser beams
Photovoltaic systems
CIGS
defects
SRH recombination
PL spectroscopy
post deposition treatment
- Language
We use two-wavelength excitation photoluminescence spectroscopy to probe defect states in CIGS thin films. Above-E g excitation is combined with a tunable IR bias light that modulates the population of the defect states. We find that IR illumination in the range of 1400–2000 nm (0.62–0.89 eV) causes a reduction of the PL intensity, the magnitude of which scales linearly with IR power. Further, KF post deposition treatment has only a modest influence on the effect of the IR excitation. Initial data suggest that we have developed an optical characterization tool for band-gap defect states.