Indium migration and controlled lateral bandgap variations in high-power strained layer InGaAs-AlGaAs lasers grown on nonplanar substrates
- Resource Type
- Periodical
- Authors
- Brovelli, L.R.; Arent, D.J.; Jaeckel, H.; Meier, H.P.
- Source
- IEEE Journal of Quantum Electronics IEEE J. Quantum Electron. Quantum Electronics, IEEE Journal of. 27(6):1470-1475 Jun, 1991
- Subject
- Engineered Materials, Dielectrics and Plasmas
Photonics and Electrooptics
Indium
Strain control
Photonic band gap
Substrates
Molecular beam epitaxial growth
Quantum well lasers
Gallium arsenide
Waveguide lasers
Etching
Mirrors
- Language
- ISSN
- 0018-9197
1558-1713
Strained single quantum well (SQW) InGaAs-AlGaAs graded-index separate confinement heterostructure (GRINSCH) lasers were grown by molecular beam epitaxy over nonplanar