Electrical Characterization of Photoconductive GaN Nanowires from 50 MHz to 33 GHz
- Resource Type
- Periodical
- Authors
- Wallis, T. M.; Gu, D.; Imtiaz, A.; Smith, C. S.; Chiang, C.-J.; Kabos, P.; Blanchard, P. T.; Sanford, N. A.; Bertness, K. A.
- Source
- IEEE Transactions on Nanotechnology IEEE Trans. Nanotechnology Nanotechnology, IEEE Transactions on. 10(4):832-838 Jul, 2011
- Subject
- Components, Circuits, Devices and Systems
Computing and Processing
Nanowires
Gallium nitride
Coplanar waveguides
Electrical resistance measurement
Capacitance
Transmission line measurements
Admittance
Microwave measurements
nanotechnology
nanowires
photoconductivity
semiconductor devices
- Language
- ISSN
- 1536-125X
1941-0085
The electrical response of two-port photoconductive GaN nanowire devices was measured from 50 MHz to 33 GHz. The admittance of the nanowire devices showed an increase on the order of 10% throughout the measured frequency range after exposure to steady ultraviolet illumination. Two different two-port microwave network models were used to extract microwave circuit parameters in the photoconductive and dark states. After illumination, the GaN nanowire devices showed a measurable increase in shunt capacitance and decreases in both the contact and nanowire resistances.