High sensitive THz Faraday rotation measurements in doped semiconductors
- Resource Type
- Conference
- Authors
- Ikebe, Yohei; Shimano, Ryo
- Source
- 2007 Conference on Lasers and Electro-Optics (CLEO) Lasers and Electro-Optics, 2007. CLEO 2007. Conference on. :1-2 May, 2007
- Subject
- Photonics and Electrooptics
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Communication, Networking and Broadcast Technologies
Fields, Waves and Electromagnetics
Rotation measurement
Polarization
Faraday effect
Charge carrier density
Electrochemical impedance spectroscopy
Dielectrics
Magnetic materials
Laser mode locking
Submillimeter wave measurements
Ultrafast optics
- Language
- ISSN
- 2160-9004
We present a highly sensitive terahertz Faraday measurement scheme with the detection sensitivity of Faraday rotation as small as 1 mrad. The scheme was applied to n-doped Si to examine the carrier density and mobility.