Ultra-thin film SOI/CMOS with selective-epi source/drain for low series resistance, high drive current
- Resource Type
- Conference
- Authors
- Hwang, J.M.; Wise, R.; Yee, E.; Houston, T.; Pollack, G.P.
- Source
- Proceedings of 1994 VLSI Technology Symposium VLSI technology VLSI Technology, 1994. Digest of Technical Papers. 1994 Symposium on. :33-34 1994
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Computing and Processing
Signal Processing and Analysis
MOS devices
Immune system
Silicon
Semiconductor films
Transistors
Implants
Annealing
Threshold voltage
Boron
Medical simulation
- Language
A self-aligned selective epitaxial technique is used to overcome the high source/drain resistance problem in ultra-thin film SOI/CMOS devices. Very low series resistances, comparable to those for bulk CMOS devices, are demonstrated with this selective-epi source/drain.ETX