A 35–37 GHz MMIC GaN Low Noise Amplifier
- Resource Type
- Conference
- Authors
- Nguyen, Nam; Phan, Kim; Lee, Sanghun; Huynh, Cuong
- Source
- 2021 International Symposium on Electrical and Electronics Engineering (ISEE) Electrical and Electronics Engineering (ISEE), 2021 International Symposium on. :26-29 Apr, 2021
- Subject
- Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Fields, Waves and Electromagnetics
Power, Energy and Industry Applications
Robotics and Control Systems
Signal Processing and Analysis
Low-noise amplifiers
Noise figure
Simulation
Power amplifiers
Microwave circuits
Microwave transistors
Transistors
Ka band LNA
MMIC
GaN
5G
- Language
A Ka band Monolithic Microwave Integrated Circuit (MMIC) low noise amplifier (LNA) design is presented. Common source configuration with inductive degeneration was used for all transistors to balance the input match and noise figure (NF). A 4-stage 150nm Gallium Nitride (GaN) LNA has the typical NF of 3.7 dB and the minimum small signal gain of above 19.7 dB over the bandwidth of 35–37 GHz. High linearity is achieved with more than 21.6 dBm output 1 dB compression point $(\mathbf{OP}_{\mathbf{1dB}})$ and 22.7 dBm saturated output power $(\mathbf{P}_{\mathbf{sat}})$. The Ka band LNA has the die dimension of $\mathbf{4340x1200}\ \mu\mathbf{m}^{2}$.