A 6-18-GHz GaN High Power Amplifier with Excellent Gain Flatness
- Resource Type
- Conference
- Authors
- Tran, Nhat; Lee, Sanghun; Huynh, Cuong
- Source
- 2023 International Symposium on Electrical and Electronics Engineering (ISEE) Electrical and Electronics Engineering (ISEE), 2023 International Symposium on. :23-28 Oct, 2023
- Subject
- Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Computing and Processing
Fields, Waves and Electromagnetics
Power, Energy and Industry Applications
Robotics and Control Systems
Signal Processing and Analysis
Silicon carbide
Spaceborne radar
Microwave communication
Microwave circuits
Wide band gap semiconductors
Radar applications
Microwave amplifiers
GaN HEMT
wideband amplifiers
monolithic microwave integrated circuit (MMIC)
reactive matching
power amplifier (PA)
- Language
This paper presents a monolithic microwave integrated circuit (MMIC) reactive matching power amplifier (RMPA) designed using a 150 nm AlGaN/GaN on SiC technology, showcasing its exceptional gain flatness of only 3dB across the 6-18 GHz band. The three-stage RMPA operates in pulsed mode with a pulse-width of 100-µsec and a duty cycle of 10%, delivering impressive performance metrics. It achieves a maximum output power of 43.5 dBm (equivalent to 22.4 watts) and a maximum efficiency of 25%, while maintaining a linear gain of 22 dB under a bias condition of 28 V drain voltage and 620 mA quiescent drain current. The MMIC PA has a small dimension of 4.5 mm × 4.05 mm.