On the scalability and carrier transport of advanced CMOS devices
- Resource Type
- Conference
- Authors
- Meikei Icong; Leland Chang; Chan, V.; Doris, B.; Huiling Shang; Min Yang; Sufi Zafar
- Source
- 2005 International Conference on Integrated Circuit Design and Technology, 2005. ICICDT 2005. Integrated circuit design and technology Integrated Circuit Design and Technology, 2005. ICICDT 2005. 2005 International Conference on. :175-178 2005
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Scalability
High-K gate dielectrics
Degradation
Electrodes
Threshold voltage
CMOS technology
Silicon on insulator technology
FETs
Immune system
High K dielectric materials
- Language
- ISSN
- 2381-3555
Conventional scaling is no longer effective to continue device performance trend because of technological difficulties in the scaling of key device parameters. In this paper, the authors discussed device scaling options beyond convention device structures. Recent progress in advanced gate stack, ultrathin body silicon on insulator (UTSOI) MOSFET and FinFET structures for improved electrostatic were discussed. Various mobility enhancement techniques were also discussed including strained silicon hybrid orientation technology, and Ge FET.