With the increasing demands of lower RC and higher interconnect density in scaling technology, an accurate electromigration (EM) reliability modeling without sacrificing lifetime performance becomes crucial. In this work, an efficient multi-link EM pattern was proposed to have a better understanding of fabrication defects and low-percentile EM reliability modeling in the dual-damascene process. Without collecting over thousand samples, the proposed multi-link EM patterns successfully validated lognormal based 3-parameter (t50, σ and X0) at