Investigation of the inserted LT-AlGaN interlayer in AlGaN/GaN/AlGaN DH-FET strucutre on Si substrates
- Resource Type
- Conference
- Authors
- Hsiao, Yu-Lin; Chang, Chia-Ao; Chang, Edward Yi
- Source
- 2014 IEEE International Conference on Semiconductor Electronics (ICSE2014) Semiconductor Electronics (ICSE), 2014 IEEE International Conference on. :229-231 Aug, 2014
- Subject
- Components, Circuits, Devices and Systems
Photonics and Electrooptics
Aluminum gallium nitride
Gallium nitride
Silicon
Substrates
Temperature measurement
X-ray scattering
Epitaxial growth
AlGaN/GaN/AlGaN
double heterostructure FET (DH-FET)
Interlayer
- Language
A novel AlGaN/GaN/AlGaN double-heterostructure field effect transistor (DH-FET) structure with an inserted LT-AlGaN interlayer grown on 150 mm Si substrate has been studied. The DH-FET structure has been characterized by transmission electron microscopy (TEM), secondary ion mass spectrometry (SIMS) and X-ray diffraction (XRD). It is found that the inserted LT-AlGaN interlayer can further induce the compressive stress to compensate the tensile stress. Furthermore, the inserted LT-AlGaN interlayer acts as a dislocation filter to reduce threading dislocation propagation. These results indicate that the inserted LT-AlGaN interlayer plays an important role in the novel DH-FET structure.