Low-cost 38 and 77 GHz CPW MMICs using ion-implanted GaAs MESFETs
- Resource Type
- Conference
- Authors
- Caruth, D.C.; Shimon, R.L.; Heins, M.S.; Hsia, H.; Tang, Z.; Shen, S.C.; Becher, D.; Huang, J.J.; Feng, M.
- Source
- 2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017) Microwave symposium Microwave Symposium Digest. 2000 IEEE MTT-S International. 2:995-998 vol.2 2000
- Subject
- Fields, Waves and Electromagnetics
Engineered Materials, Dielectrics and Plasmas
Fields, Waves and Electromagnetics
Aerospace
Communication, Networking and Broadcast Technologies
Photonics and Electrooptics
Coplanar waveguides
MMICs
Gallium arsenide
MESFETs
Circuits
Frequency
Gain
Millimeter wave technology
Noise figure
Application software
- Language
- ISSN
- 0149-645X
Oscillators, amplifiers, and frequency doublers at 38 and 77 GHz have been fabricated using direct ion-implanted GaAs MESFETs and CPW. The 38-GHz VCO delivers 12 d8m of power and the 77-GHz amplifier has 7.5 dB of gain. The various circuit results demonstrate that the direct ion-implanted GaAs MESFET process is a low-cost alternative to more expensive epitaxial device technologies for a wide variety of existing and emerging millimeter-wave circuit applications.