Commercialization of 1Gb Standalone Spin-Transfer Torque MRAM
- Resource Type
- Conference
- Authors
- Sun, J. J.; DeHerrera, M.; Hughes, B.; Ikegawa, S.; Lee, H. K.; Mancoff, F. B.; Nagel, K.; Shimon, G.; Alam, S. M.; Houssameddine, D.; Aggarwal, S.
- Source
- 2021 IEEE International Memory Workshop (IMW) Memory Workshop (IMW), 2021 IEEE International. :1-4 May, 2021
- Subject
- Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Computing and Processing
Engineered Materials, Dielectrics and Plasmas
Degradation
Temperature distribution
Torque
Nonvolatile memory
Error analysis
Switches
Reliability
STT-MRAM
magnetic tunnel junction
endurance
data retention
soft/hard fail
bit error rate
- Language
- ISSN
- 2573-7503
In this paper, we review key materials and process technology developments to successfully commercialize 1Gb standalone Spin-Transfer Torque (STT) MRAM. Magnetic tunnel junction (MTJ) stack and process integration were developed to reduce the operation voltage and to minimize the distribution of essential parameters across MTJ arrays. We demonstrate endurance cycles over 1x10 10 and data retention of 20 years at 105°C. Reliable STT switching with a current pulse width less than 10 ns was achieved with no impact on endurance cycles.