A 110-GHz large-signal lookup-table model for InP HEMTs including impact ionization effects
- Resource Type
- Periodical
- Authors
- Orzati, A.; Schreurs, D.M.M.-P.; Pergola, L.; Benedickter, H.; Robin, F.; Homan, O.J.; Bachtold, W.
- Source
- IEEE Transactions on Microwave Theory and Techniques IEEE Trans. Microwave Theory Techn. Microwave Theory and Techniques, IEEE Transactions on. 51(2):468-474 Feb, 2003
- Subject
- Fields, Waves and Electromagnetics
Indium phosphide
HEMTs
MODFETs
Impact ionization
Data mining
Millimeter wave measurements
Table lookup
Frequency measurement
Millimeter wave technology
Millimeter wave transistors
- Language
- ISSN
- 0018-9480
1557-9670
We developed an efficient method to extract a large-signal lookup table model for InP high electron-mobility transistors that takes impact ionization into account. By measuring the device on a logarithmic frequency scale, we obtain high resolution at lower frequencies to accurately characterize impact ionization, and a sufficient number of data points at millimeter-wave frequencies to extract the nonquasi-static parameters. Model validation through linear and nonlinear device measurements and its application to monolithic-microwave integrated-circuit design are presented.