Decrease of Charge Collection Due to Displacement Damage by Gamma Rays in a 6H-SiC Diode
- Resource Type
- Periodical
- Authors
- Onoda, S.; Ohshima, T.; Hirao, T.; Mishima, K.; Hishiki, S.; Iwamoto, N.; Kojima, K.; Kawano, K.
- Source
- IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 54(6):1953-1960 Dec, 2007
- Subject
- Nuclear Engineering
Bioengineering
Gamma rays
Degradation
Silicon carbide
Radiation detectors
Schottky diodes
Energy loss
Large Hadron Collider
Silicon radiation detectors
Ion beams
Performance analysis
Carrier removal rate
CCE
diffusion length
TIBIC system
6H-SiC junction diode
- Language
- ISSN
- 0018-9499
1558-1578
Charge collection efficiency (CCE) of 6H-SiC diodes was evaluated before and after gamma irradiation using a Co-60 source. After gamma irradiation of 96 Mrad(SiC), CCE at a bias of 150 V decreased from 95% to 70%. The degradation of diffusion length of minority carriers was evaluated from the change in the applied bias dependence of CCE due to gamma irradiation. We also discuss whether non-ionizing energy loss (NIEL) analysis can be applied to evaluate the diffusion length degradation of 6H-SiC as well as the carrier removal rate.