Study on electrical characterization of hexagonal-BN
- Resource Type
- Conference
- Authors
- Yamanishi, Riki; Motoda, Soshi; Shinkai, Satoko; Hasegawa, Masataka
- Source
- 2022 IEEE CPMT Symposium Japan (ICSJ) CPMT Symposium Japan (ICSJ), 2022 IEEE. :96-97 Nov, 2022
- Subject
- Bioengineering
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Photonics and Electrooptics
Power, Energy and Industry Applications
Degradation
Dielectric constant
Electric breakdown
Silicon-on-insulator
Silicon
Through-silicon vias
Permittivity
Hexagonal-BN (h-BN)
Through Silicon Via (TSV)
- Language
- ISSN
- 2475-8418
Hexagonal-BN (h-BN) based Silicon on Insulator(SOI) structure with Through Silicon Via (TSV) shows higher heat dissipation performance without degradation electrical characteristics compared with the conventional SOI structure. The electrical characteristics and the results are not clear. It is important to clarify the electrical characteristics of h-BN to implement 3D-power Supply on Chip(SoC). This paper investigates electrical characterization of h-BN.