Analysis of loss mechanism in rectenna circuit with GaN Schottky barrier diode
- Resource Type
- Conference
- Authors
- Hayashino, Kouhei; Harauchi, Kenji; Iwasaki, Yuichi; Fukui, Kazuhito; Ao, Jin-Ping; Ohno, Yasuo
- Source
- 2012 IEEE MTT-S International Microwave Workshop Series on Innovative Wireless Power Transmission: Technologies, Systems, and Applications Microwave Workshop Series on Innovative Wireless Power Transmission: Technologies, Systems, and Applications (IMWS), 2012 IEEE MTT-S International. :179-182 May, 2012
- Subject
- Power, Energy and Industry Applications
Signal Processing and Analysis
Fields, Waves and Electromagnetics
Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Computing and Processing
Schottky diodes
Fingers
Rectennas
Analytical models
Capacitance
Integrated circuit modeling
Resistance
GaN
rectenna
schottky barrier diode
loss
single shunt
simulation
- Language
Comparing circuit simulation results, an analytical model for the efficiency of single shunt rectenna circuits is developed. The model estimates the DC output power and loss power in rectenna circuits and gives good agreements with circuit simulation results. With this model, the effect of signal frequency and the diode capacitance is clarified.