Mobility Anisotropy in Black Phosphorus MOSFETs With HfO2 Gate Dielectrics
- Resource Type
- Periodical
- Authors
- Haratipour, N.; Liu, Y.; Wu, R.J.; Namgung, S.; Ruden, P.P.; Mkhoyan, K.A.; Oh, S.; Koester, S.J.
- Source
- IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 65(10):4093-4101 Oct, 2018
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Crystals
Anisotropic magnetoresistance
MOSFET
Logic gates
Dielectrics
Fabrication
Anisotropy
black phosphorus (BP)
mobility
MOSFETs
phosphorene
- Language
- ISSN
- 0018-9383
1557-9646
Precise measurements of the mobility anisotropy along high-symmetry crystal axes in black phosphorus (BP) MOSFETs are reported. Locally back-gated BP MOSFETs with 13-nm HfO 2 dielectric and channel length ranging from 0.3 to 0.7 $\mu \text{m}$ are fabricated. A single BP flake of a uniform thickness is exfoliated and etched along armchair (AC) and zigzag (ZZ) crystal axes, and the orientations are confirmed using optical and transmission electron microscopy analyses. The hole and electron mobilities along each direction are extracted using the transfer length method. The AC-to-ZZ hole mobility ratio is found to increase from 1.4 (1.5) to 2.0 (2.9) as the sheet concentration increased from $5.1\times 10^{\textsf {11}}$ to $1.9\times 10^{\textsf {12}}$ cm −2 at room temperature (77 K). The room-temperature electron mobility anisotropy is found to be similar to that for holes with an AC-to-ZZ mobility ratio increasing from 1.4 to 2.1 from $5.1\times 10^{\textsf {11}}$ to $1.9\times 10^{\textsf {12}}$ cm −2 though electrons showed only a very weak temperature dependence. A Boltzmann transport model is used to explain the concentration- and temperature-dependent mobility anisotropies which can be well described using a charge center scattering model.