Silicon Nanowire Transistor Integrated with Phase Change Gate
- Resource Type
- Conference
- Authors
- Ge, Yan-Dong; Han, Wei-Hua; Yang, Chong; Chen, Jun-Dong; Zhang, Xiao-Di
- Source
- 2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT) Solid-State & Integrated Circuit Technology (ICSICT), 2022 IEEE 16th International Conference on. :1-3 Oct, 2022
- Subject
- Components, Circuits, Devices and Systems
Silicon compounds
Resistors
Integrated circuit technology
Logic gates
Silicon
Threshold voltage
Phase change memory
- Language
The electronic synaptic devices based on phase change memory resistors have attracted extensive attention. Here, we design and fabricate a novel silicon junctionless nanowire transistor (JNT) integrated with NiAl/SiO 2 /GST stack gate, whose charge storage states can be regulated by emptying and filling the donor-like traps under interface electric fields. A shift of the threshold voltage can be achieved from -0.72 V for the stack gate to 0.27V for only GST gate, which corresponds to the change of the donor-like trap states density from 3.1×10 18 eV -1 cm -3 to 2.6×10 18 eV -1 cm -3 . The charges can be trapped into the interfaces of GST and SiO 2 by the electrical pulse through the GST gate.