Temperature-dependent mobility characteristics in one-dimension transport in junctionless nanowire transistor
- Resource Type
- Conference
- Authors
- Dou, Ya-Mei; Guo, Yang-Yan; Han, Wei-Hua; Zhao, Xiao-Song; Yang, Fu-Hua
- Source
- 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) Solid-State and Integrated Circuit Technology (ICSICT), 2018 14th IEEE International Conference on. :1-3 Oct, 2018
- Subject
- Components, Circuits, Devices and Systems
Nanowires
Logic gates
Silicon
Temperature
Quantum dots
Impurities
Temperature measurement
- Language
The n-type junctionless nanowire transistor was successfully fabricated on the silicon-on-insulator substrate. Its core component, silicon nanowires, is defined by processes such as electron beam exposure and inductively coupled plasma etching. We observed a transition from quantum dot transport to one-dimension transport with the gate voltage increasing. The temperature-dependent effective mobility characteristics of the electron transport through conduction band and impurity band are analyzed.