Optimization of implant and anneal processes
- Resource Type
- Conference
- Authors
- Prussin, S.; Reyes, J.; Onoda, H.; Hamamoto, N.; Nagayama, T.; Tanjyo, M.; Umisedo, S.; Kawamura, Y.; Hashimoto, M.; Koga, Y.; Maehara, N.; Nakashima, Y.; Yoshimi, H.; Sezaki, S.; Current, Michael
- Source
- 2010 18th International Conference on Advanced Thermal Processing of Semiconductors (RTP) Advanced Thermal Processing of Semiconductors (RTP), 2010 18th International Conference on. :86-89 Sep, 2010
- Subject
- Components, Circuits, Devices and Systems
Computing and Processing
Engineered Materials, Dielectrics and Plasmas
- Language
- ISSN
- 1944-0251
1944-026X
A method of choosing a coupled pair of a doping process and an annealing process that is optimized on the basis of the R s ·x j figure of merit. Differential Hall effect evaluations are used to measure 1/µ def , the defect scatter contribution to the mobility. Supressing 1/µ def leads to optimization of the doping process-annealing process couple.