Silicon oxide formation for TFTs using humid ozone-enriched gas ambient at low temperature
- Resource Type
- Conference
- Authors
- Hai, P.N.; Nishio, S.; Horita, S.
- Source
- Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850) Solid-state device research conference Solid-State Device Research Conference, 2004. ESSDERC 2004. Proceeding of the 34th European. :313-316 2004
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Silicon
Plasma temperature
Thin film transistors
Substrates
Semiconductor films
Oxidation
Electric variables
Fabrication
Plasma devices
Semiconductor thin films
- Language
Humid ozone-enriched ambient, created by bubbling (O/sub 3/+O/sub 2/) gas in H/sub 2/O or H/sub 2/O/sub 2/, enhanced the silicon oxide growth on a Si substrate at 250/spl deg/C. The film thickness was controllable with a high growth rate of 1.4 /spl Aring//min. The XPS data shows that the oxide layer on the Si(111) has the same transition layer structure as thermal SiO/sub 2/ film. By combination with a short-time treatment at higher temperature (below 500/spl deg/C), the electrical characteristics of SiO/sub 2/ thin films were improved. The operation of polycrystalline Si thin film transistors using this oxide film indicates that the new growth method is applicable for low-temperature device fabrication.