Effects of dielectric liners on TDDB lifetime of a Cu/ low-k interconnect
- Resource Type
- Conference
- Authors
- Tsui, T.Y.; Matz, P.; Willecke, R.; Zielinski, E.; Tae Kim; Haase, G.; McPherson, J.; Singh, A.; McKerrow, A.J.
- Source
- Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729) Interconnect technology Interconnect Technology Conference, 2004. Proceedings of the IEEE 2004 International. :78-80 2004
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Silicon compounds
Copper
Dielectric breakdown
Dielectric thin films
Life testing
Argon
Breakdown voltage
Glass
Sputter etching
Atherosclerosis
- Language
Thin films of silicon nitride (SiN) or silicon carbonitride (SiCN) were deposited as liners at metal-1 in a dual level metal Cu/organosilicate glass interconnect. Breakdown field and time dependent dielectric breakdown lifetime testing of comb/serpent test structures with SiN or SiCN liners showed improvements in performance, relative to a baseline no liner split. Two dimensional electric field simulations demonstrated that the dielectric liner significantly reduced the electric field at the Cu/OSG/etch stop interface.