Recent progress in development of radiation tolerant image sensor with field emitter array
- Resource Type
- Conference
- Authors
- Masuzawa, Tomoaki; Neo, Yoichiro; Mimura, Hidenori; Nagao, Masayoshi; Akiyoshi, Masafumi; Takagi, Ikuji; Gotoh, Yasuhito; Okamoto, Tamotsu; Igari, Tomoya; Sato, Nobuhiro
- Source
- 2018 31st International Vacuum Nanoelectronics Conference (IVNC) Vacuum Nanoelectronics Conference (IVNC), 2018 31st International. :1-2 Jul, 2018
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Image sensors
Photodiodes
Sensor arrays
Field emitter arrays
II-VI semiconductor materials
Cadmium compounds
Radiation effects
Field emitter array (FEA)
Image sensor
Cadmium telluride (CdTe)
Radiation tolerant
- Language
- ISSN
- 2380-6311
A prototype image sensor is developed using cadmium telluride-based photodiode and a volcano-structured FEA. Radiation tolerance of each component was tested by irradiating gamma-ray using cobalt-60 source. Gamma-ray tolerance of up to 1.2 MGy was confirmed for both FEA and photodiode.