LET and Voltage Dependence of Single-Event Burnout and Single-Event Leakage Current in High-Voltage SiC Power Devices
- Resource Type
- Periodical
- Authors
- Sengupta, A.; Ball, D.R.; Sternberg, A.L.; Islam, S.; Senarath, A.S.; Reed, R.A.; McCurdy, M.W.; Zhang, E.X.; Hutson, J.M.; Alles, M.L.; Osheroff, J.M.; Jacob, B.; Hitchcock, C.W.; Goswami, S.; Schrimpf, R.D.; Galloway, K.F.; Witulski, A.F.
- Source
- IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 71(4):809-815 Apr, 2024
- Subject
- Nuclear Engineering
Bioengineering
Silicon carbide
MOSFET
Degradation
Radiation effects
Ions
Leakage currents
Threshold voltage
Heavy ion
metal–oxide–semiconductor field-effect transistor (MOSFET)
positive-intrinsic-negative (p-i-n) diodes
power diodes
silicon carbide (SiC)
single-event burnout (SEB)
single-event effects
single-event leakage current (SELC)
- Language
- ISSN
- 0018-9499
1558-1578
Single-event burnout (SEB) and single-event leakage current (SELC) behavior of 1200 and 3300 V silicon carbide (SiC) power devices are analyzed based on heavy-ion irradiation tests. Both SEB and SELC degradation thresholds are improved in the 3300 V devices by at least 300 V compared to the 1200 V devices. Additionally, it was demonstrated that the measured SEB threshold is a strong function of the device bias and irradiation history and that bias and irradiation steps at intermediate voltages between the charge collection region and SEB region can result in parametric failure from accumulated leakage current rather than catastrophic failure by burnout.