SOI CMOS integrated zinc oxide nanowire for toluene detection
- Resource Type
- Conference
- Authors
- Santra, S.; Guha, P. K.; Ray, S. K.; Udrea, F.; Gardner, J. W.
- Source
- 2013 IEEE 5th International Nanoelectronics Conference (INEC) Nanoelectronics Conference (INEC), 2013 IEEE 5th International. :119-121 Jan, 2013
- Subject
- Components, Circuits, Devices and Systems
Communication, Networking and Broadcast Technologies
Computing and Processing
Signal Processing and Analysis
CMOS integrated circuits
Zinc oxide
Temperature sensors
Gas detectors
Temperature measurement
Electrodes
Gas sensor
SOI CMOS
MEMS
zinc oxide nanowires
toluene sensor
- Language
- ISSN
- 2159-3523
2159-3531
The paper reports on the in-situ growth of zinc oxide nanowires (ZnONWs) on a complementary metal oxide semiconductor (CMOS) substrate, and their performance as a sensing element for ppm (parts per million) levels of toluene vapour in 3000 ppm humid air. Zinc oxide NWs were grown using a low temperature (only 90°C) hydrothermal method. The ZnONWs were first characterised both electrically and through scanning electron microscopy. Then the response of the on-chip ZnONWs to different concentrations of toluene (400–2600ppm) was observed in air at 300°C. Finally, their gas sensitivity was determined and found to lie between 0.1% and 0.3% per ppm.