Evaluation of Bipolar Degradation in SiC MOSFETs for Converter Design
- Resource Type
- Conference
- Authors
- Wu, Yifei; Li, Chengxi; Ran, Li; Cao, Qinze; Gammon, Peter; Feng, Hao; Li, Yun; Ng, Chong; Wu, Binbing
- Source
- 2023 IEEE Energy Conversion Congress and Exposition (ECCE) Energy Conversion Congress and Exposition (ECCE), 2023 IEEE. :5359-5365 Oct, 2023
- Subject
- Components, Circuits, Devices and Systems
Power, Energy and Industry Applications
Transportation
Degradation
Performance evaluation
MOSFET
Silicon carbide
Stacking
Voltage
Energy conversion
Bipolar degradation
basal plane dislocation
Shockley stacking fault
SiC MOSFET
- Language
- ISSN
- 2329-3748
Bipolar degradation in 4H-SiC Power MOSFETs has a significant influence on the device performance. It originates from body diode operation and Shockley Stacking Faults (SSF) development in the basal plane. In this study, we have investigated the transients of initial SSF development of 1.7kV SiC MOSFETs by conducting stress current through body diode. The variation of forward voltage drop in discrete steps is shown, which explains SSF expansion exhibits a non-simultaneous occurrence across all defects. A test method has been proposed to ensure the full degradation to determine the device performance for converter design. Additionally, parallel-connected SiC MOSFETs have been tested to study impact of bipolar degradation on the early stages of converter operation.