Pseudomorphic inverted HEMT suitable to low supplied voltage application
- Resource Type
- Conference
- Authors
- Kasashima, M.; Arai, Y.; Fujishiro, H.I.; Nakamura, H.; Nishi, S.
- Source
- 1992 IEEE MTT-S Microwave Symposium Digest Microwave Symposium Digest, 1992., IEEE MTT-S International. :651-654 vol.2 1992
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Fields, Waves and Electromagnetics
Aerospace
Communication, Networking and Broadcast Technologies
Photonics and Electrooptics
HEMTs
Low voltage
MODFETs
Microwave FETs
Frequency measurement
Circuits
Knee
Microwave devices
Power generation
PHEMTs
- Language
- ISSN
- 0149-645X
The superiority of the pseudomorphic inverted high electron mobility transistor (HEMT) as a low-voltage operating device was revealed. To study the high-frequency properties of the FET, two types of frequency-variable measurement systems which represented active load and common-source circuits were employed. It was confirmed that the feature of low knee voltage in static I-V was preserved above 100 kHz, which predicts the microwave characteristics of the device. Estimated output power was 50% higher than that of the conventional pseudomorphic HEMT at a low supply voltage.ETX