Charge Trapping in Irradiated 3D Devices and ICs (Invited)
- Resource Type
- Conference
- Authors
- Zhang, En Xia; Toguchi, Shintaro; Guo, Zi Xiang; Alles, Michael L.; Schrimpf, Ronald D.; Fleetwood, Daniel M.
- Source
- 2024 IEEE International Reliability Physics Symposium (IRPS) International Reliability Physics Symposium (IRPS), 2024 IEEE. :10C.3-1-10C.3-6 Apr, 2024
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Engineering Profession
Couplings
Ring oscillators
Electron traps
Three-dimensional displays
Silicon-on-insulator
Dielectrics
Reliability
charge trapping
total ionizing dose irradiation
silicon on insulator
3D electronics
IGZO
MOS
- Language
- ISSN
- 1938-1891
Total-ionizing-dose (TID) irradiation-induced charge trapping and reliability issues in 3D devices and ICs are reviewed. Strong layer-to-layer coupling of TID response in sequential integrated (3DSI) devices results from positive charge trapping in the intermediate dielectric layer that underlies top-layer devices. Effects of radiation-induced charge trapping are illustrated for FDSOI ring oscillators fabricated in the same technology. Similar charge coupling effects are demonstrated in IGZO memory structures, emphasizing the generality of these effects in candidate 3D semiconductor technologies.