Junction Temperature measurement of SiC BJT via the voltage drop of VBC
- Resource Type
- Conference
- Authors
- Shi, Bang-Bing; Feng, Shi-Wei; He, Quan-Bo; Zhang, Ya-Min; Bai, Kun
- Source
- 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) Solid-State and Integrated Circuit Technology (ICSICT), 2018 14th IEEE International Conference on. :1-3 Oct, 2018
- Subject
- Components, Circuits, Devices and Systems
Temperature measurement
Voltage measurement
Silicon carbide
Junctions
Temperature sensors
Current measurement
Semiconductor device measurement
- Language
In this paper, an electrical method for junction temperature estimation of Silicon Carbide Bipolar Junction Transistor (SiC BJT) is presented. The measurement method is based on the measurement of the voltage drop of V BC at low current (V BC (low) ) during turn-off. This voltage is proportional to temperature due to the temperature-dependence of the base-collector PN junction. This voltage has superior sensitivity and linearity to temperature reaching almost 250°C.