Experimental analysis of mismatch in electro-thermal device parameter within parallel connected SiC MOSFETs: Considerations for multi-chip power module design
- Resource Type
- Conference
- Authors
- Fayyaz, Asad; Li, Ying; Evans, Paul; Watson, Alan; Wheeler, Pat; Gerada, Chris
- Source
- 2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia), 2023 IEEE Workshop on. :1-6 Aug, 2023
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Power, Energy and Industry Applications
Performance evaluation
MOSFET
Inductance
Silicon carbide
Photonic band gap
Conferences
Asia
SiC MOSFETs
common-source configuration
parallel connections
power module
parasitic inductance
electro-thermal device parameter
threshold voltage (Vth)
- Language
- ISSN
- 2831-3712
This paper aims to investigate the current imbalance within parallel connected common-source configuration of SiC Power MOSFET switches using double pulse transient operation. Mismatches in electro-thermal parameters e.g., threshold voltage ($V_{th)}$ and uneven unintentional PCB parasitic inductances can result in uneven current sharing during the transient operation. The tests presented here were carried out using $3^{\mathrm{r}\mathrm{d}}$ generation 650 V, 49 A-45 m$\Omega$ discrete SiC power MOSFET devices connected in parallel which is representative of a mutli-chip power module architecture. Moreover, theoretical analysis presented here also demonstrates how parasitic inductances in different locations within the commutation loop will have different effects on transient current sharing.