Terahertz Emission Enhancement of i-/n-Gallium Arsenide Thin Film on a Porous Silicon Distributed Bragg Reflector designed at 800nm
- Resource Type
- Conference
- Authors
- Jose, Ameera; Montecillo, Anthony; Lopez, Joybelle; De Los Rcyes, Alexander; Bacaoco, Miguel; Faustino, Maria Angela; Cafe, Arven; Vasquez, John Daniel; Gonzales, Karl Cedric; Catindig, Gerald Angelo; Somintac, Armando; Salvador, Arnel; Estacio, Elmer
- Source
- 2018 43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2018 43rd International Conference on. :1-2 Sep, 2018
- Subject
- Aerospace
Bioengineering
Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Fields, Waves and Electromagnetics
Photonics and Electrooptics
Gallium arsenide
Distributed Bragg reflectors
Substrates
Laser beams
Silicon
Stimulated emission
Optical films
- Language
- ISSN
- 2162-2035
A semiconductor terahertz (THz) emitter based on an active i-/n-GaAs layer integrated on a porous silicon (PSi) distributed Bragg reflector (PSi-DBR) is presented. It is specifically designed for the use of a very thin GaAs film of thickness less than the penetration depth of the 800nm laser beam $(\sim 1\mu \mathrm{m})$. The DBR acts as a reflecting substrate for the excess transmitted photoexcitation. Using a 550nm-thick GaAs, the novel design exhibited a 67% increase in peak-to peak THz signal compared to a similar GaAs on silicon (Si) substrate. The enhancement can be attributed to the increased optical absorption and multiple reflections in the active layer.