Background limited infrared hot-electron transistor at 77 K
- Resource Type
- Periodical
- Authors
- Kuan, C.H.; Tsui, D.C.; Choi, K.K.; Chang, W.H.; Chang, C.; Farley, C.
- Source
- IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 40(11):2142-2143 Nov, 1993
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Voltage
Electromagnetic wave absorption
Doping
Ellipsoids
Optical polarization
Detectors
Substrates
Molecular beam epitaxial growth
Optical devices
Fourier transforms
- Language
- ISSN
- 0018-9383
1557-9646
The authors report a background-limited photodetector (BLIP) infrared hot-electron transistor (IHET) with current density compatible with the read-out circuit at 77 K. To reduce J/sub D/ (dark current density), a novel GaAs/Al/sub x/Ga/sub 1-x/As quantum-well infrared photodetector (QWIP), in which the aluminum molar ratio of the barriers increases in three steps, has been designed. This barrier is able to suppress the dark current due to thermally assisted tunneling by providing a thicker effective when the structure is under bias. The remaining J/sub D/ is also largely eliminated by designing a bandpass filter placed adjacent to the QWIP.