Strain- and Compositional Modulation of the Near-Band-Edge Band Structures of AlN and Its Ternary Alloys with GaN and InN
- Resource Type
- Conference
- Authors
- Fu, Deyi; Zhang, Rong; Liu, Bin; Xie, Zili; Xiu, Xiangqian; Lu, Hai; Zheng, Youdou; Edwards, Gerard
- Source
- 2009 13th International Workshop on Computational Electronics Computational Electronics, 2009. IWCE '09. 13th International Workshop on. :1-4 May, 2009
- Subject
- Computing and Processing
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Gallium nitride
Optical polarization
Capacitive sensors
Aluminum gallium nitride
Optical modulation
Substrates
Optical films
Light emitting diodes
Gallium alloys
Laboratories
- Language
In this paper, the k- p perturbation theory is adopted to calculate the interband excitonic transition energies and their polarization selection rules in c-plane A1N films, Ga x Al 1-x N and In x Al 1-x N alloys modulated by both isotropic biaxial in-plane strain and alloy compositions. It is shown that valence band mixing induced by both strain and alloy composition has dramatic influence on the optical polarization properties. The calculated results provide both good physical insight into the band structure engineering and helpful instructions in the future design of high efficient and novel UV-emitters.