High-Power InGaAs/InAlAs Schottky Photodiode with Low Amplitude-to-Phase Noise Conversion
- Resource Type
- Conference
- Authors
- Chizh, A.; Malyshev, S.; Mikitchuk, K.; Zhuravlev, K.; Chistokhin, I.; Dmitriev, D.; Toropov, A.; Aksenov, M.; Valisheva, N.; Gilinsky, A.
- Source
- 2018 International Topical Meeting on Microwave Photonics (MWP) Microwave Photonics (MWP), 2018 International Topical Meeting on. :1-4 Oct, 2018
- Subject
- Components, Circuits, Devices and Systems
Fields, Waves and Electromagnetics
Photonics and Electrooptics
Photodiodes
Microwave measurement
Optical attenuators
Optical fibers
Microwave amplifiers
Photoconductivity
Optical device fabrication
high-power photodiode
InGaAs Schottky photodiode
amplitude-to-phase (AM-PM) noise conversion
- Language
In the paper, high-power InGaAs/InAlAs Schottky photodiode with low amplitude-to-phase noise conversion is presented. It is shown that photodiode cutoff frequency is 28 GHz and maximal output microwave power is 58 mW at the frequency of 20 GHz. Amplitude-to-phase noise conversion coefficient of the proposed photodiode is demonstrated to be less than 1.5 rad/W at the frequency of 20 GHz