Strain-Compensated Type-II $\text{GaAs}_{1-x}\text{Bi}_{x}/\text{GaN}_{y}\text{As}_{1-y}$ “W” Quantum Wells for GaAs-Based Telecom Lasers
- Resource Type
- Conference
- Authors
- Davidson, Zoe C. M.; Rorison, Judy M.; Sweeney, Stephen J.; Broderick, Christopher A.
- Source
- 2022 Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR) Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2022 Conference on. :1-2 Jul, 2022
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Fields, Waves and Electromagnetics
Photonics and Electrooptics
Laser theory
Tensile strain
Quantum mechanics
Radiative recombination
Quantum well lasers
Lasers and electrooptics
Telecommunications
- Language
We theoretically analyse strain-compensated $\text{GaAs}_{1-x}\text{Bi}_{x}/\text{GaN}_{y}\text{As}_{1-y}$ “W-type” quantum wells, demonstrating a viable approach to achieve efficient GaAs-based 1.3 and $1.55\ \mu \mathrm{m}$ lasers in which non-radiative Auger recombination is expected to be mitigated by type-II band offsets. © 2022 The Author(s)