800-nA Process-and-Voltage-Invariant 106-dB PSRR PTAT Current Reference
- Resource Type
- Periodical
- Authors
- Amaravati, A.; Dave, M.; Baghini, M. S.; Sharma, D. K.
- Source
- IEEE Transactions on Circuits and Systems II: Express Briefs IEEE Trans. Circuits Syst. II Circuits and Systems II: Express Briefs, IEEE Transactions on. 60(9):577-581 Sep, 2013
- Subject
- Components, Circuits, Devices and Systems
Resistors
Temperature measurement
MOSFET
Generators
Semiconductor device measurement
Resistance
Process and temperature tolerance
proportional to absolute temperature (PTAT) current
resistor
transconductance
- Language
- ISSN
- 1549-7747
1558-3791
This brief presents a novel process-and-voltage-invariant proportional to absolute temperature (PTAT) current reference. The proposed circuit is designed and fabricated in 180-nm mixed-mode CMOS technology. Measurement results show that the $I_{\rm PTAT}$ varies only by $\pm$2.4% $(\pm 3\sigma/mean)$ across 18 test chips. One thousand Monte Carlo simulation runs show that the maximum deviation $(\pm3\sigma/mean)$ from the desired value of the PTAT current is $\pm$5.4%. The proposed PTAT current reference uses a process, voltage, and temperature (PVT)-invariant resistor circuit having $R_{\rm ON}$ variation reduced by 4.2 times, as compared to a fixed biased MOSFET. The proposed PTAT current reference draws only 800-nA current from the supply voltage and also exhibits a high dc power supply rejection ratio (PSRR) of 106 dB. This brief also presents a PVT-invariant transconductance using the implemented PVT-invariant resistor.