High Performance CVD Grown Nanolayered PtSe2/SOI Heterostructure for Broadband Photodetection
- Resource Type
- Conference
- Authors
- Khanikar, Prabal Dweep; Moudgil, Akshay; Sandhu, Harmanpreet Kaur; Dewan, Sheetal; Sharma, Sumit; Lo, Shih-Chun; Namdas, Ebinazar B.; Das, Samaresh
- Source
- 2023 IEEE 23rd International Conference on Nanotechnology (NANO) Nanotechnology (NANO), 2023 IEEE 23rd International Conference on. :1-5 Jul, 2023
- Subject
- Bioengineering
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Fields, Waves and Electromagnetics
General Topics for Engineers
Photonics and Electrooptics
Power, Energy and Industry Applications
Robotics and Control Systems
Absorption
Silicon-on-insulator
Detectors
Heterojunctions
Photodetectors
Silicon
Broadband communication
- Language
- ISSN
- 1944-9380
Transition metal dichalcogenides based on the Group-10 transition metals are emerging as a subset of layered 2D materials which offer tunable semimetallic to semiconductor properties and exceptionally high charge carrier mobilities. Here we report PtSe 2 /SOI heterojunction photodetectors based on direct growth of PtSe 2 on a silicon-on-insulator (SOI) substrate through a low-temperature chemical vapor deposition (CVD) technique. The heterojunction device exhibits high responsivity of 918 A/W at 785 nm light wavelength and a fast photo-response of 110/98 µs. The device also has broadband detection capability from 340 nm to 1350 nm beyond the absorption cut-off of Si owing to the strong near-infrared (NIR) absorption by PtSe 2 . The feasibility of large-scale selenization of Pt into PtSe 2 by CVD process and the low-temperature growth technique makes it a promising candidate for developing future IR photodetectors.