Integration of fine-pitched Through-Silicon Vias and Integrated Passive Devices
- Resource Type
- Conference
- Authors
- Shariff, Dzafir; Marimuthu, Pandi Chelvam; Hsiao, Ken; Asoy, Lily; Yee, Chia Lai; Oo, Aung Kyaw; Buchanan, Keith; Crook, Kath; Wilby, Tony; Burgess, Steve
- Source
- 2011 IEEE 61st Electronic Components and Technology Conference (ECTC) Electronic Components and Technology Conference (ECTC), 2011 IEEE 61st. :844-848 May, 2011
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Through-silicon vias
Reliability
Silicon
Band pass filters
Resonator filters
Scattering parameters
Testing
- Language
- ISSN
- 0569-5503
2377-5726
This paper reports on a silicon interposer containing both Through-Silicon Vias [TSV] and Integrated Passive Devices [IPD]. The fine-pitched 30μm diameter × 100μm deep TSV connect the IPD on one side of the wafer with Re-Distribution Layer [RDL] metallization and solder bumps on the other. Such a platform provides great versatility for heterogeneous system integration and reduced form-factor packaging. Interposer manufacture is described and performance of integrated RF filters and resonators is assessed after reliability testing, including; high temperature stress, thermal cycling and accelerated stress test.