Wide line, low current electromigration in Al-Cu metallization with refractory underlayer
- Resource Type
- Conference
- Authors
- Baerg, B.; Crandall, R.; Wu, K.
- Source
- Proceedings of 1994 IEEE International Reliability Physics Symposium Reliability physics Reliability Physics Symposium, 1994. 32nd Annual Proceedings., IEEE International. :192-197 1994
- Subject
- General Topics for Engineers
Electromigration
Metallization
Stress
Circuit testing
Bonding
System testing
Current density
Electrons
Temperature
Passivation
- Language
A one-year electromigration experiment was performed on an 8.9 /spl mu/m wide serpentine metal structure, at stress current densities from 0.3 to 1.3 MA/cm/sup 2/. Resistance decreases were observed and explained, and used to estimate a drift velocity which is linearly proportional to the difference between the stress current and the current threshold. The activation energy was found to be approximately 1.1 eV.ETX