It is still challenging to have both statistical measurements of CD (critical dimension) in ease-of-use and flexibility of measuring various features in short turnaround, in combination with analytical TEM techniques. DigitalMicrograph (DM) is a very common software and is compatible with all kinds of analytical TEM techniques. However, this software does not provide massive CD measurements for statistical analysis. This statistical analysis becomes more and more important while the complexity of structures increases, and sub-nanometer control becomes necessary in the semiconductor devices. In this paper, we developed a technique to fill in the gap by combining analytical TEM techniques and development of DM scripts. The analytical TEM techniques have been optimized to provide measurements at their highest available accuracies by considering their spatial resolutions and contrast mechanisms. The developed scripts provide an automatic metrology process at a high time efficiency and avoid measurement bias, which exists in the measurements with human eyes. Last but not least, this developed technique has also been applied to PFA (Physical Failure Analysis) such as contact failure due to oxidation of CoSi, which causes higher sheet resistance.