Toward Monolithic GaN on Si Inter-Sub-Band Infrared Optoelectronics
- Resource Type
- Periodical
- Authors
- Yokev, I.; Agrawal, M.; Eyadat, B.; Kostianovskii, V.; Gal, L.; Cohen, A.; Kornblum, L.; Dharmarasu, N.; Radhakrishnan, K.; Orenstein, M.; Bahir, G.
- Source
- IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 71(4):2497-2502 Apr, 2024
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Silicon
Detectors
Substrates
III-V semiconductor materials
Aluminum nitride
Surface treatment
Electrons
Gallium compounds
integrated optics
photodetectors
quantum well (QW) devices
- Language
- ISSN
- 0018-9383
1557-9646
We have successfully demonstrated the first CMOS-compatible monolithic epitaxial integration of GaN-based infrared (IR) detectors on Si. The device is a GaN/AlGaN quantum cascade detector (QCD) grown selectively in windows on a 4-in Si (111) substrate using plasma-assisted molecular beam epitaxy. The CMOS compatibility of the QCD growth method was verified by applying it to Si circuitry fabricated on (100) surface of a double hetero-oriented silicon on insulator (SOI) substrate. The photo signal, centered at a wavelength of 4.6 $\mu \text{m}$ , was measured at 110 K. The zero-bias responsivity of 81 $\mu \text{A}$ /W at 18 K and detectivity of $1.2\times 10^{{7}}$ Jones were recorded.