TA-A7 Ga implantation into Si at ultra-high dose rates
- Resource Type
- Periodical
- Source
- IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 26(11):1834-1835 Nov, 1979
- Subject
Components, Circuits, Devices and Systems Engineered Materials, Dielectrics and Plasmas - Language
- ISSN
- 0018-9383
1557-9646