The investigation of custom grown vertical zone melt semi-insulating bulk gallium arsenide as a radiation spectrometer
- Resource Type
- Conference
- Authors
- McGregor, D.S.; Antolak, A.J.; Chui, H.C.; Cross, E.S.; Fang, Z.-Q.; Goorsky, M.S.; Henry, R.L.; Look, D.C.; Mier, M.G.; Morse, D.H.; Nordquist, P.E.R.; Olsen, R.W.; Pocha, M.; Schieber, M.; Schlesinger, T.E.; Soria, E.; Toney, J.E.; Yoon, H.; Wang, C.L.
- Source
- 1995 IEEE Nuclear Science Symposium and Medical Imaging Conference Record Nuclear science and medical imaging Nuclear Science Symposium and Medical Imaging Conference Record, 1995., 1995 IEEE. 1:85-89 vol.1 1995
- Subject
- Nuclear Engineering
Power, Energy and Industry Applications
Fields, Waves and Electromagnetics
Engineered Materials, Dielectrics and Plasmas
Signal Processing and Analysis
Bioengineering
Gallium arsenide
Crystalline materials
Impurities
Laboratories
Zirconium
Refining
Spectroscopy
Gamma ray detectors
Crystallization
Voltage
- Language
Vertical zone melt (VZM) bulk GaAs ingots have been zone refined (ZR) and zone leveled (ZL) to reduce EL2 deep donor levels and impurity concentrations with the intent of improving properties for gamma ray detectors. ZR and ZL GaAs ingots had background impurity levels and deep donor EL2 concentrations near or below detectable limits. The crystallinity of the material was slightly superior to commercial liquid encapsulated Czochralski (LEC) material, and nearly equivalent to commercial vertical gradient freeze (VGF) material. However, the homogeneity of the electrical properties for the ZL and ZR VZM material was inferior to commercially available material. Resulting gamma ray spectra was poor from detectors fabricated with the ZL or ZR VZM material.