This paper proposes a statistical approach to modeling the single-sided read static noise margin (RSNM) of a 6-transistor SRAM cell. The proposed modeling considers threshold voltage (Vth), channel length, and width variations. In addition, it considers Vth roll-off and drain-induced barrier-lowering effect of short channel transistors. The proposed method needs only a few samples to calculate the coefficients of the proposed equation. Using the calculated analytic equation, the proposed method can offer feedbacks for design improvements. In goodness-of-fit tests, the proposed method achieved about 89% and 99% improvements in the K-S statistic and the chi-square statistic compared with the Quasi-Monte Carlo method for the same number of samples. Also, compared with the previous method based on an analytic model, the proposed method achieved about 91% and 98% improvements in the goodness-of-fit tests.