The hydrogenated poly-silicon germanium (poly-SiGe:H) epitaial film has been investigated by gold induced lateral crystallization (Au-ILC) technology on a-SiGe:H layer at 10-hr 350°C annealing temperature and 60-sccm hydrogen (H 2 ) content. By this optimal condition, the growth rate by Au induced can be as large as 15.9 μm/hr. Due to low annealing temperature treatment (≤ 400°C) and large growth rate, this novel technology will be a noticeable poly-SiGe:H pin IR-sensing fabrication on a conventional pre-coated indium tin oxide (ITO)-glass substrate. Under 1-μW IR-LED incident (with peak wave length at 710 nm) and at 5-V biased voltage, the poly-SiGe:H pin IR sensor developed by the Au-ILC technology, i.e., an Al (anode)/ n poly-SiGe:H/ i poly-SiGe:H/ p poly-SiGe:H/ ITO (cathode)/ glass-substrate structure posses a maximum optical gain and response speed, almost 600% and 130%, respectively, better than that of a traditional pin type. Meanwhile, the FWHM of a poly-SiGe:H pin sensor with Au-ILC technology corresponding to a traditional pin sensor can be reduced from 280 to 150 nm, thus ascertaining its good IR-sensing selectivity. These better IR-sensing performances are demonstrated again that the proposed Au-ILC technology is a candidate to the low cost IC on opto-electronic applications.