First Demonstration of Stacked 2T0C-DRAM Bit-Cell Constructed by Two-Layers of Vertical Channel-All-Around IGZO FETs Realizing 4F2 Area Cost
- Resource Type
- Conference
- Authors
- Chen, Chuanke; Xiang, Jinjuan; Duan, Xinlv; Lu, Congyan; Niu, Jiebin; Zhang, Kaiping; Liu, Yu; Lu, Nianduan; Jiao, Zhengying; Shen, Yongqing; Luan, Qingjie; Wang, Guilei; Zhao, Chao; Yang, Guanhua; Geng, Di; Li, Ling; Liu, Ming
- Source
- 2023 International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2023 International. :1-4 Dec, 2023
- Subject
- Bioengineering
Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Computing and Processing
Engineered Materials, Dielectrics and Plasmas
Fields, Waves and Electromagnetics
Nuclear Engineering
Photonics and Electrooptics
Power, Energy and Industry Applications
Robotics and Control Systems
Signal Processing and Analysis
Three-dimensional displays
Microprocessors
Field effect transistors
Stacking
Random access memory
Computer architecture
Reliability
- Language
- ISSN
- 2156-017X
For the first time, we have realized the vertical-stacked 4F 2 2T0C DRAM cell constructed by two-layers of Channel-All-Around (CAA) IGZO FETs. The devices fabrication process is BEOL-compatible with the process temperature