STT-MRAM Product Reliability and Cross-Talk
- Resource Type
- Conference
- Authors
- Naik, V. B.; Yamane, K.; Kwon, J.; Lim, J.H.; Balasankaran, N.; Chung, N.L.; Hau, L.Y.; Chao, R.; Chiang, C.; Huang, Y.; Pu, L.; Ma, L.; Meng, C.; Otani, Y.; Zhang, L.; Jang, S.H.; Ling, T.; Ting, J.W.; Yoon, H.; Mueller, J.; Pfefferling, B.; Kallensee, O.; Merbeth, T.; Seet, C.S.; Wong, J.; You, Y.S.; Soss, S.; Chan, T.H.; Siah, S.Y.
- Source
- 2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Electron Devices Technology & Manufacturing Conference (EDTM), 2022 6th IEEE. :366-368 Mar, 2022
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Photonics and Electrooptics
Radio frequency
Resistance
Temperature distribution
Nonvolatile memory
Random access memory
Immunity testing
Magnetic fields
STT-MRAM
Reliability
Immunity
- Language
STT-MRAM has been showcased to be a viable solution to replace eFlash and SRAM technologies. With the increasing demand for connected edge computing and internet of things, the usage of STT-MRAM in MCU and MPU products has become the reality. The product reliability of industrial-grade (-40~125°C) 40Mb 22FDX ® embedded-MRAM technology having 5x-solder reflows compatibility stack is presented. The stand-by magnetic immunity and cross-talk between MRAM and RF are also discussed.