Fine-pitch backside via-last TSV process with optimization on temporary glue and bonding conditions
- Resource Type
- Conference
- Authors
- Chen, Erh-Hao; Hsu, Tzu-Chien; Lin, Cha-Hsin; Tzeng, Pei-jer; Wang, Chung-Chih; Chen, Shang-Chun; Chen, Jui-Chin; Chen, Chien-Chou; Hsin, Yu-Chen; Chang, Po-Chih; Chang, Yiu-Hsiang; Chen, Shin-Chiang; Lin, Yu-Ming; Liao, Sue-Chen; Ku, Tzu-Kun
- Source
- 2013 IEEE 63rd Electronic Components and Technology Conference Electronic Components and Technology Conference (ECTC), 2013 IEEE 63rd. :1811-1814 May, 2013
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Fields, Waves and Electromagnetics
Through-silicon vias
Bonding
Copper
Etching
Foundries
Routing
- Language
- ISSN
- 0569-5503
2377-5726
Fine-pitch backside via last through silicon via (TSV) process flow is demonstrated as a qualified candidate to be used in the construction of 3D-IC structure. Glue and its bonding conditions are critical to the final yield of the process. Different glues and temporary bonding conditions are investigated to find out the optimized stable process flow. Different daisy chain lengths are used to evaluate the maturity of the backside via last TSV process.