Exchange bias study of CoFeB/IrMn antidot and nanodot arrays fabricated by nanosphere lithography
- Resource Type
- Conference
- Authors
- Li, X.; Leung, C. W.; Lin, K.-W.; Chan, M. S.; Pong, P. W. T.
- Source
- 2016 5th International Symposium on Next-Generation Electronics (ISNE) Next-Generation Electronics (ISNE), 2016 5th International Symposium on. :1-2 May, 2016
- Subject
- Bioengineering
Components, Circuits, Devices and Systems
Computing and Processing
Fields, Waves and Electromagnetics
Photonics and Electrooptics
Signal Processing and Analysis
Annealing
Films
Frequency modulation
Nanostructures
Magnetic sensors
Lithography
exchange bias
nanostructures
nanosphere lithography
- Language
- ISSN
- 2378-8607
Exchange bias effect in nanostructures are widely investigated for applications in nanometric spintronic sensors. In this work, nanosphere lithography was adopted to pattern CoFeB/IrMn antidot and nanodot arrays. The exchange bias and coercivity of the nanostructures and continuous films exhibit similar exponential dependence on CoFeB layer thickness. High temperature annealing results in decreased exchange bias and coercivity. This work provides physical insights on magnetization reversal response in nanosized spintronic devices.